What is ion implantation in IC fabrication?
What is ion implantation in IC fabrication?
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
What is proton implantation?
A proton-implantation technique enables the formation of small current apertures that are free from crystal defects.
What are the advantages of ion implantation?
The advantages of ion implantation include the ability to implant virtually any ion species into any substrate with a high level of control of location (lateral and depth) and composition. Ion implantation also has the disadvantages of being a line-of-sight process and requiring high capital cost equipment.
What is the difference between diffusion and ion implantation?
Ion implantation and diffusion are two techniques used in the production of semiconductors with some other materials. The main difference between ion implantation and diffusion is that ion implantation is isotropic and very directional whereas diffusion is isotropic and there is lateral diffusion.
Why annealing is required after ion implantation?
After implantation, a thermal diffusion (annealing) is necessary for the removal of the ion-induced damage, the activation of dopants and the formation of the desired profile shape.
What is implant damage?
A consequence of ion implantation is the damage to the silicon caused when injecting dopants into silicon substrate that break the silicon structure. This damage causes leakage or electron trapping in device circuits. Therefore, minimizing implant damage is of high importance.
What is low energy ion implantation?
Low-energy ion implantation: range ~ 1 to 200 keV. Ion implantation is usually the low-energy process to introduce doping atoms into a semiconductor wafer to form devices and integrated circuits. Low-energy ion implanter is shown in Figure 1.
Is necessary after ion implantation?
What is ion implantation techniques?
Ion implantation is a surface treatment process in which ions of nitrogen or carbon are accelerated and made to penetrate the surface of a component to impart wear resistance.
Why ion implantation is better than diffusion?
Ion implantation involves the bombardment of the substrate with ions, accelerating to higher velocities. Advantages: Diffusion creates no damage and batch fabrication is also possible. Ion implantation is a low-temperature process. It allows you to control the precise dose and the depth.
What happens when you anneal metal?
Annealing steel or any other metal involves heating it to a specific temperature and allowing it to cool at a specified rate. Doing so removes impurities in the grain, increasing the metal’s ductility and reducing its hardness.
What are the pros and cons of ion implantation vs diffusion?
