What happens if a germanium diode is reverse biased?
What happens if a germanium diode is reverse biased?
A reverse-biased diode prevents current from going through it, due to the expanded depletion region. In actuality, a very small amount of current can and does go through a reverse-biased diode, called the leakage current, but it can be ignored for most purposes.
What is the characteristics of reverse bias?
Detailed Solution
| Forward Bias of PN junction | Reverse Bias of PN junction |
|---|---|
| The depletion layer is very thin (narrow) | The depletion layer is thick |
| Junction offers low resistance | Junction offers very high resistance |
| An ideal diode has zero resistance | An ideal diode has infinite resistance |
What is reverse characteristics of a diode?
5.1. Reverse bias usually refers to how a diode is used in a circuit. If a diode is reverse biased, the voltage at the cathode is higher than that at the anode. Therefore, no current will flow until the electric field is so high that the diode breaks down.
What are the main differences between a silicon diode and a germanium diode?
The primary difference between silicon and germanium diodes is the voltage needed for the diode to turn on (or become “forward-biased”). Silicon diodes require 0.7 volts to become forward-biased, whereas germanium diodes require only 0.3 volts to become forward-biased.
What is the reverse breakdown voltage of germanium diode?
The Si diode has a large reverse breakdown voltage of about 70-100V compared to Ge which has the reverse breakdown voltage around 50V. The structure of Germanium crystals will be destroyed at a higher temperature.
What is the effect of temperature in the diode reverse characteristics?
The effect of increased temperature on the characteristics curve of a PN junction diode is as shown in above figure. It may be noted that the forward characteristics shifts upwards with increase in temperature. On the other hand, the reverse characteristics shifts downwards with the increase in temperature.
Which of the following is a characteristic of ideal diode reverse biased?
Characteristics of Ideal Diode when Reverse Biased An ideal diode is expected to fully inhibit the flow of current through it under reverse biased condition. In other words it is expected to mimic the behavior of a perfect insulator when reverse biased.
What is the reverse biased and forward biased characteristic?
In a typical diode, forward biasing occurs when the voltage across a diode permits the natural flow of current, whereas reverse biasing denotes a voltage across the diode in the opposite direction. However, the voltage present across a diode during reverse biasing does not produce any significant flow of current.
Which of the following is a characteristic of an ideal diode when reverse biased?
The current-voltage relationship of an ideal diode. Any negative voltage produces zero current — an open circuit. As long as the voltage is non-negative the diode looks like a short circuit….
| Ideal Diode Characteristics | ||
|---|---|---|
| Operation Mode | On (Forward biased) | Off (Reverse biased) |
| Diode looks like | Short circuit | Open circuit |
What are reverse characteristics of PN junction diode?
1. Zero Bias – No external voltage potential is applied to the PN junction diode. 2. Reverse Bias – The voltage potential is connected negative, (-ve) to the P-type material and positive, (+ve) to the N-type material across the diode which has the effect of Increasing the PN junction diode’s width.
When compared to a germanium diode a silicon diode reverse saturation current is?
The Si diode has low reverse current compared to Ge. The Si diode has a large reverse breakdown voltage of about 70-100V compared to Ge which has the reverse breakdown voltage around 50V. The structure of Germanium crystals will be destroyed at a higher temperature.
What is difference of germanium and silicon?
Silicon and germanium have four valence electrons but at the given temperature germanium will have more free electrons and higher conductivity than silicon. Silicon is more widely used in the electronic device than germanium since it can be used at a higher temperature.
